| PART |
Description |
Maker |
| UPD488448FB-C71-45-DQ1 UPD488448FB-C60-53-DQ1 UPD4 |
128 M-bit Direct Rambus??DRAM
128 M-bit Direct RambusDRAM
128 M-bit Direct Rambus?/a> DRAM
128 M-bit Direct Rambus DRAM
|
NEC Corp.
|
| KM416RD8ACD-RK70 KM416RD8ACD-RK80 KM418RD8ACD-RK70 |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM 128/144Mbit RDRAM56 × 16/18位2 * 16属银行直接RDRAMTM
24.9K 1% 1/4W -200 TO 500 PPM/C MF 128/144Mbit RDRAM56 × 16/18位2 * 16属银行直接RDRAMTM
BACKSHELL
CLAMP
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM416RD8AC KM418RD2AC KM418RD2AD KM418RD2C KM418RD |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz).
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz).
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz).
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| S29PL129N70FFW002 S29PL127N65GFIW02 |
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
|
SPANSION
|
| S29PL256N65FAWW02 S29PL129N65FAWW00 S29PL256N65FAW |
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
|
SPANSION[SPANSION]
|
| MCM6810 MCM6810CP MCM6810CS MCM6810P MCM6810S |
1 MHz; V(cc/in): -0.3 to 7.0V; 450ns; 128 x 8-bit randon-access memory
128 8-bit Random-Access Memory
|
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| 24LC00T-EP 24LC00T-ESN 24LC00T-EOT 24LC00T-EST 24L |
CAP CER 100PF 100V 10% RADIAL 128位的I 2 C？总线串行EEPROM
CAP 100PF 100V 10% NP0(C0G) RAD.10 .15X.15 BULK TRIMMED-LEAD 128位的I 2 C？总线串行EEPROM
128 Bit I 2 C Bus Serial EEPROM 128位的I 2 C？总线串行EEPROM
CONNECTOR ACCESSORY
CAP 2700PF 50V 5% NP0(C0G) SMD-1206 TR-7
128 Bit I2C Bus Serial EEPROM
128 Bit I 2 C? Bus Serial EEPROM
|
HIROSE ELECTRIC Co., Ltd.
Microchip Technology, Inc.
Microchip Technology Inc.
MICROCHIP[Microchip Technology]
|
| MC-4R128FKK6K-840 MC-4R128FKK6K |
128MB 32-bit Direct Rambus DRAM RIMM Module 64M X 16 DIRECT RAMBUS DRAM MODULE, DMA232
128MB 32-bit Direct Rambus DRAM RIMM Module
|
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
| MC-4R512FKK8K MC-4R512FKK8K-840 |
512MB 32-bit Direct Rambus DRAM RIMM Module 256M X 18 DIRECT RAMBUS DRAM MODULE, DMA232
|
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
| ISL5314 |
Direct Digital Synthesizer, 125MSPS w/5V, 100MSPS w/3.3V, 14-bit DAC, 48-bit frequency control
|
Intersil
|
| BR9016AF-W BR9016ARFVM-W BR9016ARFV-W BR9080ARFV B |
8k/ 16k bit EEPROMs for direct connection to serial ports
8k 16k bit EEPROMs for direct connection to serial ports
8k, 16k bit EEPROMs for direct connection to serial ports 分为8K6K，可直接连接到串行端口位的EEPROM
512 X 16 4-WIRE SERIAL EEPROM, PDSO8
1K X 16 4-WIRE SERIAL EEPROM, PDSO8
|
ROHM[Rohm]
Rohm Co., Ltd.
|
